View IRF6100_390472.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 93930C
IRF6100
HEXFET(R) Power MOSFET
l l l l l l
Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel
VDSS
-20V
RDS(on) max
0.065@VGS = -4.5V 0.095@VGS = -2.5V
ID
-5.1A -4.1A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an ex-
D
G S
tremely efficient and reliable device.
The FlipFETTM package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFETTM the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
FlipFETTM ISOMETRIC
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 5.1 3.5 35 2.2 1.4 17 12 -55 to + 150
Units
V A
W mW/C V C
Thermal Resistance
Symbol
RJA RJ-PCB
Parameter
Junction-to-Ambient Junction-to-PCB mounted
Typ.
35
Max.
56.5 ---
Units
C/W
www.irf.com
1
9/5/01
IRF6100
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 --- --- --- -0.45 9.8 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, I D = -250A -0.010 --- V/C Reference to 25C, ID = -1mA --- 0.065 VGS = -4.5V, I D = -5.1A --- 0.095 VGS = -2.5V, I D = -4.1A --- -1.2 V VDS = VGS , ID = -250A --- --- S VDS = -10V, ID = -5.1A --- -1.0 VDS = -20V, VGS = 0V A --- -25 VDS = -16V, VGS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 21 ID = -5.1A 1.9 2.9 nC VDS = -16V 5.0 7.5 VGS = -5.0V 12 --- VDD = -10V 12 --- ID = -1.0A ns 50 --- RG = 5.8 50 --- VGS = -4.5V 1230 --- VGS = 0V 250 --- pF VDS = -15V 180 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 48 34 -2.2 A -33 -1.2 72 51 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A di/dt = 100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square 2oz copper on FR-4.
Pulse width 400s; duty cycle 2%.
2
www.irf.com
IRF6100
100
VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -2.50V -1.80V -1.50V -1.20V BOTTOM -1.00V TOP
10
1
-1.00V
0.1
1
-1.00V
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -5.1A
-I D , Drain-to-Source Current (A)
1.5
TJ = 150 C
10
1.0
0.5
1 1.0
V DS = -15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF6100
2000
1600
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = -5.1A V DS =-16V
8
C, Capacitance (pF)
Ciss
1200
6
800
4
400
Coss Crss
2
0 1 10 100
0 0 4 8 12 16 20 24
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
10
TJ = 150 C
-ID , Drain Current (A) I
100 10us 10 100us 1ms 1 10ms
TJ = 25 C
1
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
0.1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10 100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF6100
6.0
VDS
5.0
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
4.0
3.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
VGS 10%
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2
10
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
-
VDD
5
IRF6100
R DS(on) , Drain-to -Source On Resistance ( )
0.08
0.07
R DS (on) , Drain-to-Source On Resistance ( )
0.16
0.12
0.06
0.05
ID = -5.1A
0.04
0.08 VGS = -2.5V VGS = -4.5V 0.04 0 10 20 30 40 -I D , Drain Current (A)
0.03 1.0 2.0 3.0 4.0 5.0 6.0 7.0
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
www.irf.com
+
D.U.T.
-
VDS
IRF6100
1.1 20
-V GS(th) Gate threshold Voltage (V)
1.0 16 0.9 0.8 0.7 0.6 4 0.5 0.4 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000
Power (W)
ID = -250A
12
8
T J , Temperature ( C )
Time (sec)
Fig 15. Threshold Voltage Vs. Temperature
Fig 16. Typical Power Vs. Time
www.irf.com
7
IRF6100
FlipFETTM
2X B
Outline Dimension and Tape and Reel
1.524 [.060] A O 13" 0.10 [.004] C
0.10 [.004] C
1
4
2X
2X
0.800 [.032]
1.524 [.060]
BALL ASS IGNMENT S 1= 2= 3= 4= SOURCE DRAIN DRAIN GATE BALL # 1 CORNER
8mm
2
3
8mm
4X
0.400 [.016]
0.388 [.0153] 4X O 0.338 [.0133] 0.15 [.006] 0.08 [.003] CAB C 4mm FEE D DIRECT ION
C
0.05 [.002] C
NOTES : 1. T APE AND REEL OUT LINE CONF ORMS TO EIA-481 & EIA-541.
0.280 [.0110] 0.240 [.0094]
0.812 [.032] 0.537 [.0211] 0.752 [.029] 0.507 [.0199] 0.20 [.008] C
NOTES : 1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES].
RECOMMENDED FOOT PRINT
PART MARKING
4X O 0.25 [.010] GAT E SOURCE PIN 1 MARK 0.800 [.032] PART NUMBER LOT NUMBER DAT E CODE DRAIN DRAIN
IRF 6100 F001 2301
0.800 [.032]
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.9/01
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF6100

	To Download IRF6100 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .